c haracteristic symbol sr220 sr230 sr240 sr250 sr260 sr280 sr2100 SR2150 sr2200 unit sr220 ? sr2200 2.0 a schottky barrier diode feat ures ! schottky barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d m echanical data ! case: do-15, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.40 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version m aximum ratings and electrical characteristics @t a =2 5c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 sr220 ? sr2200 0. 55 0.70 0.85 0.90 v 2.0 a 14 21 28 35 42 56 70 105 140 v 20 30 40 50 60 80 100 150 200 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rms reverse voltage v r( rms) a verage rectified output current @t l = 75c i o non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 50 a forward voltage @i f = 2.0a v fm p eak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0. 5 20 ma typical thermal resistance (note 1) r jl r ja 28 88 c /w operat ing temperature range t j -65 t o +125 c s torage temperature range t st g -65 t o +150 c z ibo seno electronic engineering co., ltd. www.senocn.com do-15 dim m in max a 24.5 ? b 5.50 7. 62 c 0. 60 0.80 d 2. 60 3. 60 all d i mensions in mm
0 10 20 30 40 5 0 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 100 c j 10 100 1000 0.1 11 0 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r f=1.0mhz t = 25 c j 0 20 40 60 80 100 120 140 i , ins t an t aneou s revers e curren t (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 1k 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f 100 0 0.5 1.0 25 50 75 100 125 150 i average forward current (a) o, t , lead temperature ( c) fig. 1 forward current derating curve l 1.5 2.0 2.5 3.0 2 of 2 sr220 ? sr2200 sr220 ? sr2200 sr250 ? sr260 sr220 ? sr240 sr280 ? sr2200 sr250 ? sr2200 sr220 ? sr240 z ibo seno electronic engineering co., ltd. www.senocn.com
|
